1. A Fully Three-Dimensional Atomistic Quantum Mechanical Study on Random Dopant-Induced Effects in 25-nm MOSFETs.
- Author
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Xiang-Wei Jiang, Hui-Xiong Deng, Jun-Wei Luo, Shu-Shen Li, and Lin-Wang Wang
- Subjects
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QUANTUM theory , *METAL oxide semiconductor field-effect transistors , *DENSITY , *SCHRODINGER equation , *FLUCTUATIONS (Physics) , *SIMULATION methods & models , *MATHEMATICAL models , *POISSON algebras , *WAVE functions - Abstract
A fully 3-D atomistic quantum mechanical simulation is presented to study the random dopant-induced effects in nanometer metal-oxide-semiconductor field-effect transistors. The empirical pseudopotential is used to represent the single particle Hamiltonian, and the linear combination of bulk band method is used to solve the million atom Schrödinger equation. The gate threshold fluctuation and lowering due to the discrete dopant configurations are studied. It is found that quantum mechanical effects increase the threshold fluctuation while decreasing the threshold lowering. The increase of threshold fluctuation is in agreement with the researchers' early study based on an approximated density gradient approach. However, the decrease in threshold lowering is in contrast with the density gradient calculations. [ABSTRACT FROM AUTHOR]
- Published
- 2008
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