1. A linearized wideband low noise amplifier in 65nm CMOS for multi-standard RF communication applications
- Author
-
Yi-Yang Wu, Jing Jin, and Kamal El-Sankary
- Subjects
Computer science ,Amplifier ,020208 electrical & electronic engineering ,Bandwidth (signal processing) ,Feed forward ,Linearity ,Hardware_PERFORMANCEANDRELIABILITY ,02 engineering and technology ,Noise figure ,Chip ,Low-noise amplifier ,CMOS ,Hardware_INTEGRATEDCIRCUITS ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Wideband - Abstract
In this paper, a wideband low-noise amplifier (LNA) with an improved feedforward distortion cancellation technique is proposed for multi-band and multi-standard RF communication applications. Based on the conventional wideband balun-LNA, the auxiliary path is connected in parallel with the main path to suppress the nonlinearity. The novel topology structure helps implement the scaling factor on the chip without pay extra price. Experimental results have demonstrated a bandwidth of 3.7 GHz bandwidth, a voltage gain of 15 dB, and a noise figure below 6.5 dB in TSMC 65 nm CMOS technology with 1.2 V voltage supply. Moreover, a 3.5 to 7 dB improvement in IIP3 is achieved within the bandwidth in comparison with the conventional LNA.
- Published
- 2017