10 results on '"Yin, Ruiyuan"'
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2. Hydrogen-Modulated Step Graded Junction Termination Extension in GaN Vertical p-n Diodes.
3. Toward Reliable Extraction of the Properties of Border Traps in Lateral GaN Power MOSFET with a Distributed Network Model
4. High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer
5. Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance.
6. Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities.
7. Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer.
8. A Compact Model for Border Traps in Lateral MOS Devices with Large Channel Resistance.
9. Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage.
10. Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers.
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