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1. Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters.

Author

Heller, Eric R., Vetury, Rama, and Green, Daniel S.

Subjects
*MODULATION-doped field-effect transistors, *ALUMINUM compounds, *GALLIUM nitride, *FINITE element method, *DATA modeling, *TRANSMISSION electron microscopes, *DIRECT currents
Abstract

We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less well-known model parameters. A variety of electrical outputs from the model are compared to experiment, and the level of agreement is reported. [ABSTRACT FROM AUTHOR]

Published
2011
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