1. On the Universality of Hot Carrier Degradation: Multiple Probes, Various Operating Regimes, and Different MOSFET Architectures
- Author
-
Souvik Mahapatra and Rashmi Saikia
- Subjects
Materials science ,STRESS ,charge pumping (CP) ,02 engineering and technology ,01 natural sciences ,Temperature measurement ,Planar ,IDLIN and IDSAT degradation ,0103 physical sciences ,MOSFET ,Electronic engineering ,Electrical and Electronic Engineering ,010302 applied physics ,EXTENDED NMOS TRANSISTORS ,Measurement method ,N-MOSFETS ,V-T shift ,LDEMOS ,021001 nanoscience & nanotechnology ,Bias temperature instability (BTI) ,STATE ,Electronic, Optical and Magnetic Materials ,Universality (dynamical systems) ,LDD MOSFET ,hot carrier degradation (HCD) ,ANALYTICAL-MODEL ,Logic gate ,FinFET ,self-heating effect (SHE) ,0210 nano-technology ,Hot carrier degradation ,Voltage - Abstract
Comprehensive review and reanalysis are done on previously reported experimental hot carrier degradation data in various MOSFET architectures. The universality of time kinetics and voltage acceleration of degradation, obtained using multiple measurement techniques, is analyzed for OFF- and different ON-state modes in long and short channel planar and drain extended MOSFETs and FinFETs. The similarities and differences of such diverse measurement methods are analyzed. Existing theories are qualitatively benchmarked against this analysis, and capabilities as well as inconsistencies of those theories are discussed.
- Published
- 2018