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The fabrication of silicon shallow junction photodiodes is a relevant topic for the detection of blue and near ultraviolet weak photon fluxes. In this paper we present a simple model to calculate the Quantum Detection Efficiency (QDE) of a Geiger Mode Avalanche Photodiode (GMAP) as a function of the dead layer thickness above the junction depletion layer. A comparison between calculated and experimental data is also presented. Moreover, by using the same model, an analysis of the QDE at 420 nm wavelength of conventional GMAPs based on shallow [N.sup.+]--P and [P.sup.+]--N junctions is given. Index Terms--Avalanche triggering probability, dead layer, Geiger mode avalanche photodiode, quantum detection efficiency, silicon photomultiplier.

The article examines the results of the charge and time characterization of a novel 100-channel silicon photomultiplier (SiPM). The charge measurement results show that SiPM can distinguish up to approximately 45 photons at room temperature and is able to achieve a time shift as a function of the intensity of the laser due to the operating principle of a gain-switching diode laser.

The article examines the results of the noise characterization of a novel 100-channel silicon photomultiplier. This device can be used to for the detection of very weak light pulses down to single photons and at a fixed temperature the noise behavior is reproducible which makes straightforward corrections due to dead-time and random noise pulse contamination possible.