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A compact nonquasi-static (NQS) MOSFET model is presented that incorporates the carrier-response delay mechanisms influencing the formation of carriers in the channel. The model predicts the correct transient terminal currents and achieves a stable circuit simulation.

A completely surface-potential-based compact model for a fully depleted SOI-MOSFET, called the Hiroshima University semiconductor technology academic research center IGFET model silicon-on-insulator (HiSIM-SOI) is reported. The HiSIM-SOI is verified to reproduce measured I-V characteristics as also 1/f noise data of a 250-nm fully depleted SOI technology, while the stable convergence of HiSIM-SOI in the circuit simulation is confirmed.

The Hiroshima University Semiconductor Technology Academic Research Center IGFET Model (HiSIM) is a complete MOSFET model for advanced technologies based on the surface potential concept. It is suited for accurate RF circuit simulation, enabling high accuracy and a reduced number of model parameters.

A compact nonquasi-static (NQS) MOSFET model is presented that incorporates the carrier-response delay mechanisms influencing the formation of carriers in the channel. The model predicts the correct transient terminal currents and achieves a stable circuit simulation.

A completely surface-potential-based compact model for a fully depleted SOI-MOSFET, called the Hiroshima University semiconductor technology academic research center IGFET model silicon-on-insulator (HiSIM-SOI) is reported. The HiSIM-SOI is verified to reproduce measured I-V characteristics as also 1/f noise data of a 250-nm fully depleted SOI technology, while the stable convergence of HiSIM-SOI in the circuit simulation is confirmed.

The Hiroshima University Semiconductor Technology Academic Research Center IGFET Model (HiSIM) is a complete MOSFET model for advanced technologies based on the surface potential concept. It is suited for accurate RF circuit simulation, enabling high accuracy and a reduced number of model parameters.

Nonplanar polyoxide electrical/thermal properties and the effects on EEPROM operations are examined.

The current status of research in the field of power semiconductor device models is reviewed. For this purpose, the basic modeling problems and research issues, which have to be overcome in this field, are discussed. Recently, some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed, and feasibility of parameter determination. From this comparison, a prediction of the future evolution of circuit simulation models for power semiconductor devices naturally emerges. Many of the different concepts are expected to survive only in an application niche, where their specific points of strength are important. However, three modeling concepts have already been proven to be successfully applicable to the complete spectrum of power semiconductor devices and have their strength for different grades of complexity of the power circuit. A revolutionary development from anticipated or long-due breakthroughs is on the other hand not expected in the foreseeable future. Index Terms - CAD, circuit simulation, modeling, parameter extraction, power semiconductor devices.