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Start Over Author "Sadwick, Laurence P." Publisher institute of electrical and electronics engineers, inc.
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1. Molecular beam epitaxy growth of TmPGaAs and transistor action in GaP/TmP/GaAs heterostructures

Author

Lin, Ching-Hsi, Hwu, R. Jennifer, Sadwick, Laurence P., and Heo, Dongho

Subjects
Gallium arsenide -- Research, Diodes, Schottky-barrier -- Research, Transistors -- Research, Business, Electronics, Electronics and electrical industries
Abstract

Growth of thulium phosphide (TmP) by molecular-beam epitaxy (MBE) on GaAs substrate is examined. Good epilayer quality is shown, using X-ray diffraction (XRD), atomic force micoscopy (AFM) and transmission electron microscopy (TEM) analysis.

Published
2001

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