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Your search keyword '"Transistors -- Production processes"' showing total 3 results
Start Over Descriptor "Transistors -- Production processes" Publisher institute of electrical and electronics engineers, inc.
3 results on '"Transistors -- Production processes"'

1. High-performance logic and high-gain analog CMOS transistors formed by a shadow-mask technique with a single implant step

Author

Hook, Terence B., Brown, Jeffrey S., Breitwisch, Matthew, Hoyniak, Dennis, and Mann, Randy

Subjects
Complementary metal oxide semiconductors -- Technology application, Transistors -- Production processes, Transistors -- Research, Technology application, Business, Electronics, Electronics and electrical industries
Abstract

Transistors fabricated with a photoresist mask are placed in close proximity to the gate to effectively block the angled halo implant from the gate region. Asymmetric devices are fabricated to produce devices with improved analog characteristics without an additional masking layer.

Published
2002

2. (100) and (111) Si MOS transistors fabricated with low growth temperature (400 [degrees] C) gate oxide by Kr/[O.sub.2] microwave-excited high-density plasma

Author

Hamada, Tatsufumi, Saito, Yuji, Hirayama, Masaki, Sugawa, Sigetoshi, Aharoni, Herzl, and Ohmi, Tadahiro

Subjects
Transistors -- Production processes, Semiconductors -- Plasma effects, Business, Computers, Electronics, Electronics and electrical industries
Abstract

A drastic reduction in the growth temperature (400 [degrees] C) of highly reliable Si[O.sub.2] gate oxides grown by a Kr/[O.sub.2] microwave-excited high-density plasma technique is shown to yield MOS I-V characteristics comparable to those obtained in transistors with conventionally grown dry gate oxides at 900 [degrees] C. The benefits of this technique are summarized. Index Terms--Low-temperature process, oxygen radical, plasma process, surface orientation.

Published
2001

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