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Your search keyword '"Yugang Zhou"' showing total 3 results
Start Over Author "Yugang Zhou" Publisher institute of electrical and electronics engineers, inc.
3 results on '"Yugang Zhou"'

1. Multiple description quantizer design for multiple-antenna systems with MAP detection

Author

Yugang Zhou and Wai-Yip Chan

Subjects
Technology application, Circuit designer, Integrated circuit design, Posterior distributions -- Methods, Posterior distributions -- Equipment and supplies, Circuit design -- Methods, Circuit design -- Technology application, Antenna arrays -- Design and construction, Antenna arrays -- Technology application
Published
2010

2. DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Author

Jie Liu, Yugang Zhou, Jia Zhu, Yong Cai, May Lau, and Chen, Kevin J.

Subjects
Gates (Electronics) -- Design and construction, Gallium compounds -- Electric properties, Ion channels -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The dc and radio-frequency (rf) characteristics of [Al.sub.0.3][Ga.sub.0.7]N/GaN/[In.sub.0.1][Ga.sub.0.9]N/GaN double-heterojunction HEMT (DH-HEMT) structure are analyzed. The E-mode devices with good dc, RF small signal, and power performances are fabricated on the InGaN-notch DH-HEMT structure by using C[F.sub.4] plasma treatment before the deposition of the gate electrodes.

Published
2007

3. Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode

Author

Yong Cai, Yugang Zhou, Kei May Lau, and Chen, Kevin J.

Subjects
High-electron-mobility transistors -- Design and construction, Gallium compounds -- Electric properties, Nitrides -- Electric properties, Aluminum compounds -- Electric properties, Fluorides -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

A fabrication method with an accurate control of threshold voltages ([V.sub.th] of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment is presented, whereby the [V.sub.th] of AlGaN/GaN HEMTs can be continuously shifted from -4V in a conventional depletion-mode HEMT to 0.9V in an enhancement-mode HEMT. A physical model of the threshold voltage is provided to analyze the effects of the fluoride-based plasma treatment on AlGaN/GaN HEMTs.

Published
2006

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