Search

Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. Submicrometer wafer-flatness is shown to be required to achieve the critical dimension uniformity better than 10 nm on 3-in substrates. Arrayed waveguide grating devices were fabricated and the effect of inter-waveguide gap scaling on the excess losses was measured and compared to simulations. Excess losses down to 0.15 dB were demonstrated to be lower than predicted with the 2-D simulations. The tapering of the etch depth inside the gaps due to the lag effect of the etch process may explain the improvements.

An array of monolithic wide-tunable lasers is integrated using selective area growth to shift the bandgap of their gain section. A gap-free tuning is demonstrated from the combination of the tuning ranges of the lasers, and single-mode operation is verified.

Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.

ArF deep UV (193 nm) lithography was successfully applied to fabricate Arrayed Waveguide Gratings in generic Indium Phosphide technology. The sub-dB transmission losses demonstrate the advantages of scaling down the minimum feature size to 100 nm.

In this paper we introduce the III–V photonic integration platforms for emerging applications beyond telecommunications. Recent achievements in the InP generic and InP membrane platforms for wireless and sensing applications are reviewed. The realized chips show the great potential of the InP-based photonic integration due to its full functionality, high flexibility and high performance.

Generic photonic integration technology platforms allow for design and fabrication of large complexity application specific photonic integrated circuits. Monolithic active-passive integration on indium phosphide substrate naturally enables a reliable co-integration of optical gain elements and therefore on-chip realization of advanced laser systems. An overview of multi-wavelength sources in the form of photonic integrated circuits fabricated using such integration technology for applications in telecommunications, sensing, millimeter and terahertz generation will be given.

Progress on the development of a long wavelength (∼2 µm) generic monolithic photonic integration technology on indium phosphide substrate and a novel concept of a tunable laser realized as a photonic integrated circuit using such technology are presented. Insights into the development of active and passive waveguide structures which are used to define a limited set of on-chip functionalities in the form of building blocks will be given. A novel tunable laser was proposed and designed using such predefined set of basic building blocks. The laser geometry features an intra-cavity wavelength tuning mechanism based on asymmetric Mach-Zehnder interferometers in a nested configuration. The photonic integrated circuit chip was fabricated within the first long wavelength multi-project wafer run. The experimental evaluations of the fabricated device show a record tuning range of 31 nm around 2027 nm and successful measurements of a 0.86 GHz wide absorption line of carbon dioxide. These results provide a demonstration of a fully functional photonic integrated circuit operating at wavelengths that are much longer than those in the typical telecommunication windows as well as the use of indium phosphide based generic photonic integration technologies for gas sensing applications.

The performance of integrated planar waveguide mode locked lasers can be enhanced using the available photonic integration platform technology in indium-phosphide. Extended cavity mode locked oscillators including DBR mirrors and phase modulators can be realized at telecom wavelengths to improve performance and control over the device. Integrated pulse shapers and special amplifiers can be used to improve the output properties further.

In this paper we present our recent progress on 2.5 GHz mode-locked, quantum well lasers operating at 1550 nm. Two such lasers are monolithically integrated on an InP substrate. Stable passive and hybrid mode-locking of both lasers operating at the same time with a small repetition rate difference is demonstrated.

Experimental and simulation work, presented in this letter, demonstrates for the first time how the monolithic integration of two single-mode lasers in a master-slave configuration, can substantially increase the achievable bit rate of a direct modulation adaptively modulated optical orthogonal frequency-division multiplexing (AMO-OFDM) system. The Levin-Campello algorithm is applied to select the OFDM bit and power loading scheme used for each system configuration. Improvement in terms of data throughput due to injection is measured for several transmission distances with the improvement in performance presented in terms of error vector magnitude per OFDM subcarrier.

Using monolithic integration technology we have designed and fabricated tunable lasers in the 1.5 µm region with a demonstrated tuning range of 60 nm and single mode operation. This performance is achieved using intracavity tunable Mach-Zehnder interferometers that use voltage controlled phase modulators. In this paper we will discuss design considerations and advantages of such tunable lasers.

The authors present a multi-carrier transmitter based on a gain switched laser employed in a next generation access network. The simple, robust and cost efficient direct modulation based comb generation technique offers closely spaced coherent channels. Each of the channels is imposed with 2.5 Gbaud data using QPSK and 16-QAM formats. The authors also present a performance comparison between the commonly used coherent detection scheme and a novel receiver architecture based on a pilot tone aided direct detection scheme. The simplified low cost receiver, enabled by the phase correlated optical comb tones, eases the requirement for an expensive local oscillator (tunable laser), reduces the need for digital signal processing and also greatly enhances the phase noise tolerance of the system.

In this paper we present some characterizations of passively mode-locked semiconductor lasers. These lasers are multimode and they exhibit a modulation of their output power even though they are DC-biased. The modulation frequency corresponds to their free-spectral range. We demonstrate their potential: for generation of ultra-fast modulation for THz wave generation at room temperature without any direct modulations applied, in the radio frequency range they synchronise their modulation to the bit-rate of an incoming signal used for clock extraction. Therefore these devices can be used for all-optical clock recovery.