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Here, we analyze inhomogeneities in the barrier height (BH) of Al/Cu5FeS4 Schottky device from the electrical ( ${I}$ – ${V}$ ) measurements with a temperature range between 303 and 408 K. The temperature-dependent performance of our fabricated device is analyzed by using the thermionic emission (TE) theory. Some important diode parameters like BH ( $\Phi _{\text {bo}}$ ), ideality factor ( $\eta $ ), and series resistance ( ${R}_{S}$ ) are evaluated from the forward current–voltage characteristic curves. The calculated $\eta $ and ${R}_{S}$ of the Schottky barrier diode (SBD) decrease, whereas the $\Phi _{\text {bo}}$ of the device increases with the increase in temperature. The value of Richardson constant (A*) for our material is obtained as $1.94\times $ 10−4 A cm−2 K−2 in the temperature range 303–408 K, which is found as much lesser than the theoretical value of 29.90 A cm−2 K−2. The discrepancy of A* from the theoretical value has been well explained by TE theory with the assumption of Gaussian distribution (GD) of BHs due to the existence of BH inhomogeneities at metal semiconductor (MS) junction. The obtained values of the mean BH $\overline {\Phi _{\text {bo}}}$ and the standard deviation $\sigma _{s}$ are 1.026 eV and 173 mV in the corresponding temperature range. The mean BH (1.199 eV) and Richardson constant (29.73 Acm−2K−2) are determined from the modified Richardson plot depending on the inhomogeneity of BHs. Apparent BH consists of mean BH ( $\overline {\Phi _{\text {bo}}}$ ) and standard deviation ( $\sigma _{\text {s}}$ ). The $\sigma _{\text {s}}$ contributes significantly to the modification of Richardson constant and mean BH. The calculated value of the modified Richardson constant is in close agreement with the theoretical value. From ${C}$ – ${V}$ measurements built-in voltage and effective BH of this structure were calculated as a function of frequency.

In this literature, we have investigated the magnetic properties and Schottky device-based charge transport properties of hydrothermally derived Mn0.04Cu0.05Zn0.91O nanorod. The doping of 3-D transitional metals, Mn and Cu, within ZnO makes it potentially applicable in spin-based electronics, whereas its temperature-dependent conductivity (of the order of 10−3 in C.G.S.) makes it suitable for semiconductor-based devices. The observation of intrinsic ferromagnetism of the synthesized composite and its variation of magnetization with magnetic field and temperature exhibited the suitability of spin-based electronic application. To check the applicability in optoelectronic devices, metal–semiconductor (Al/Mn0.04Cu0.05Zn0.91O) junction was fabricated and analyzed. The current–voltage characteristic represented the rectifying behavior of the junction with on/off current ratio 4.3 at ±1 V in dark and potential barrier height 0.61 eV. The significant change in rectification due to the influence of incident radiation makes this material suitable for photosensing electronic device application.