1. Radiation-Induced Defect Centers in Thermally Grown Oxide Films
- Author
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C. L. Marquardt and G. H. Sigel
- Subjects
Nuclear and High Energy Physics ,Materials science ,business.industry ,Oxide ,Electron ,Space charge ,law.invention ,chemistry.chemical_compound ,Nuclear Energy and Engineering ,chemistry ,Gate oxide ,law ,Optoelectronics ,Wafer ,Irradiation ,Electrical and Electronic Engineering ,business ,Electron paramagnetic resonance ,Order of magnitude - Abstract
Electron spin resonance and etch-back techniques have been employed to identify radiation-induced defect centers in thermally grown oxide films on SOS wafers and to determine their spatial distribution in the oxide film. The only defect identified was the E' center, which was found to be indistinguishable from E' centers in irradiated bulk fused silica samples. The distribution of E' centers in-oxide films irradiated to a dose of 108 rad (Si) was observed to consist of a uniform bulk distribution plus a concentration build-up near the Si-SiO2 interface. The application of a positive 10 volt bias to a 1.08kA gate oxide during gamma irradiation produced an order of magnitude increase in the E' center concentration.
- Published
- 1975
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