1. Dislocation Scattering in ZnMgO/ZnO Heterostructures
- Author
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Zhanguo Wang, Cheng Yan Gu, Shaoyan Yang, Hong Yuan Wei, Gui Juan Zhao, Ling Sang, Chang Bo Liu, Gui Peng Liu, Xiang Lin Liu, and Qin Sheng Zhu
- Subjects
Electron mobility ,Electron density ,Materials science ,Condensed matter physics ,business.industry ,Scattering ,Wide-bandgap semiconductor ,Zinc compounds ,Heterojunction ,Electronic, Optical and Magnetic Materials ,Condensed Matter::Materials Science ,Optoelectronics ,Electrical and Electronic Engineering ,Dislocation ,business - Abstract
The role of dislocation scattering in electron mobility in ZnMgO/ZnO heterostructures was studied. It was found that dislocation scattering was dominant in the low-electron concentration region. The total low-temperature mobility was calculated by considering dislocation scattering and interface-roughness scattering (IRS) together. The sheet density of dislocations was chosen as Ndis=1.5 × 108 cm-2 and the IRS parameters were Δ = 5.206 and Λ = 30 Å. We obtained a good fit between our calculated results and experimental data reported in the works referenced.
- Published
- 2013