80 results on '"Chen, Wanjun"'
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2. Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress
3. Accurate Evaluation of Threshold Voltage Hysteresis in SiC MOSFET under Switching Stress
4. The ESD Behavior of D-Mode GaN MIS-HEMT
5. An Adjustable P-Region Potential SiC Trench MOSFET With Improved High-Frequency and Short-Circuit Performance
6. A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs
7. Numerical Analysis of an Ultralow Switching Loss IGBT With an Inner Primary Blocking Junction
8. Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh di/dt Condition
9. Experimental Demonstration of an Integrated Bidirectional Gate ESD Protection Structure for p-GaN Power HEMTs
10. A Novel Insulated Gate Trigger Thyristor Integrated with Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching
11. On the Abnormal Reduction and Recovery of Dynamic R ON under UIS Stress in Schottky p-GaN Gate HEMTs
12. A GaN Lateral Bidirectional ESD Clamp Based on the Floating-Gate MBS and a Regulating Capacitor
13. ORSI Salient Object Detection via Bidimensional Attention and Full-stage Semantic Guidance
14. An Ultralow Loss Reverse-Conducting LIGBT With Embedded P-P-N Diode in Oxide Trench
15. A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance
16. An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode
17. Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress
18. Investigation of Failure Mechanisms of 1200 V Rated Trench SiC MOSFETs Under Repetitive Avalanche Stress
19. A Hybrid-Channel Injection Enhanced Modulation 4H-SiC IGBT Transistors With Improved Performance
20. A Novel Gate-to-Source ESD Protection Clamp for GaN HEMT
21. Analysis of Energy Loss in GaN E-Mode Devices Under UIS Stresses
22. Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain
23. A Novel Thyristor-Based Bidirectional SSCB With Controllable Current Breaking Capability
24. Temperature Dependence of Pulsed Power Performance of Insulated Gate Trigger Thyristor
25. Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp
26. Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature
27. Constructing Time-Varying Directed EEG Network by Multivariate Nonparametric Dynamical Granger Causality
28. Design of an Isolated Circuit Breaker With Robust Interruption Capability for DC Microgrid Protection
29. A Novel SiC MOSFET With Embedded Auto-Adjust JFET With Improved Short Circuit Performance
30. Simulation Study of a High Gate-to-Source ESD Robustness Power p-GaN HEMT With Self-Triggered Discharging Channel
31. An Efficient and Reliable Solid-State Circuit Breaker Based on Mixture Device
32. Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs
33. Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET
34. Crosstalk Suppression in Monolithic GaN Devices Based on Inverted E-Field Decoupling
35. Voltage Coupling Enhancement for Transient Gate Overvoltage Suppression of Insulated Gate Trigger Thyristor in Ultrahigh di/dt Pulse Applications
36. Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism
37. Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT
38. Design and Experimental Demonstration of Integrated Over-Current Protection Circuit for GaN DC–DC Converters
39. Design and Experimental Verification of an Efficient SSCB Based on CS-MCT
40. A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance
41. Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions
42. Modeling the Influence of the Acceptor-Type Trap on the 2DEG Density for GaN MIS-HEMTs
43. Tri-Gated Hybrid Anode AlGaN/GaN Power Diode With Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current
44. Ultrathin-Barrier AlGaN/GaN Hybrid-Anode-Diode With Optimized Barrier Thickness for Zero-Bias Microwave Mixer
45. All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs
46. Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition
47. GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review
48. High Voltage Insulated Gate Trigger Thyristor With High-Efficiency Injection for Fast Turn-on and High Current Pulse
49. An Ultralow Loss Insulated Gate Bipolar Transistor With Emitter Dual Injection
50. An Extraction Method for the Interface Acceptor Distribution of GaN MOS-HEMT
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