38 results on '"Chevalier, Pascal"'
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2. Track and Hold Amplifier Investigation for 100-GHz Bandwidth, 200-GS/s ADC Front Ends
3. Compact E-Band I/Q Receiver in SiGe BiCMOS for 5G Backhauling Applications
4. Circular Faster-Than-Nyquist Signaling for High Spectral Efficiencies: Optimized EP-Based Receivers
5. Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAXEstimation From Measured Data
6. SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems
7. Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology
8. A 210–284-GHz I–Q Receiver With On-Chip VCO and Divider Chain
9. Third-Order Volterra MVDR Beamforming for Non-Gaussian and Potentially Non-Circular Interference Cancellation
10. Enhanced Widely Linear Filtering to Make Quasi-Rectilinear Signals Almost Equivalent to Rectilinear Ones for SAIC/MAIC
11. Design of Low-Power Active Tags for Operation With 77–81-GHz FMCW Radar
12. SiGe HBT Technology: Future Trends and TCAD-Based Roadmap
13. Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
14. A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output
15. 55-nm SiGe BiCMOS Distributed Amplifier Topologies for Time-Interleaved 120-Gb/s Fiber-Optic Receivers and Transmitters
16. Innovative SiGe HBT Topologies With Improved Electrothermal Behavior
17. Large System Analysis of a GLRT for Detection With Large Sensor Arrays in Temporally White Noise
18. Millimeter-Wave In Situ Tuner: An Efficient Solution to Extract the Noise Parameters of SiGe HBTs in the Whole 130–170 GHz Range
19. Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology
20. A Study of SiGe HBT Signal Sources in the 220–330-GHz Range
21. 160-GHz Power Amplifier Design in Advanced SiGe HBT Technologies With ${P}_{\rm sat}$ in Excess of 10 dBm
22. $D$-Band Total Power Radiometer Performance Optimization in an SiGe HBT Technology
23. High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band
24. Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part I: Vertical Scaling
25. Physical and Electrical Performance Limits of High-Speed Si GeC HBTs—Part II: Lateral Scaling
26. Characterization of the Noise Parameters of SiGe HBTs in the 70–170-GHz Range
27. Design of a Dual W- and D-Band PLL
28. An 18-Gb/s, Direct QPSK Modulation SiGe BiCMOS Transceiver for Last Mile Links in the 70–80 GHz Band
29. Sequential High-Resolution Direction Finding From Higher Order Statistics
30. 0.13 $\mu$m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications
31. Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on >Thin-Film SOI Technology
32. Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave Imaging
33. 165-GHz Transceiver in SiGe Technology
34. Scalable Approach for HBT's Base Resistance Calculation
35. Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOI
36. Higher Order Direction Finding From Arrays With Diversely Polarized Antennas: The PD-2q-MUSIC Algorithms
37. Widely Linear MVDR Beamformers for the Reception of an Unknown Signal Corrupted by Noncircular Interferences
38. Design and Scaling of W-Band SiGe BiCMOS VCOs
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