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Your search keyword '"Filicori, F."' showing total 34 results
Start Over Author "Filicori, F." Publisher institute of electrical and electronics engineers (ieee)
34 results on '"Filicori, F."'

32. A Fully Nonlinear Compact Modeling Approach for High-Frequency Noise in Large-Signal Operated Microwave Electron Devices

Author

Corrado Florian, Pier Andrea Traverso, Fabio Filicori, Traverso, P.A., Florian, C., and Filicori, F.

Subjects
Engineering, Noise temperature, Radiation, low-noise amplifier (LNA), business.industry, Quantum noise, Behavioral modeling, Shot noise, Y-factor, diffusion noise, large-signal operation, Condensed Matter Physics, nonlinear noise figure, Noise, Noise generator, noise compact modeling, Electronic engineering, microwave transistor, Effective input noise temperature, Flicker noise, Electrical and Electronic Engineering, measurement-based modeling, nonlinear noise modeling, business, high-frequency (HF) noise
Abstract

A technology-independent, inherently nonlinear approach is proposed for the compact modelling of high-frequency noise in microwave transistors under large-signal operating conditions. For the compact nonlinear noise model formulation we assume that noise generation can be described by a suitable set of distributed stochastic processes perturbing a very general, non-quasi-static deterministic description of the electron device, in accordance with the strategies adopted in physics-based methods for the choice and exploitation of microscopic diffusion noise sources. The propagation of the internal distributed noise sources up to the intrinsic device terminals leads to a set of non-stationary, correlated equivalent noise generators, nonlinearly controlled by the instantaneous large-signal working point of the device. Starting from a first formulation for the generators, formally derived from a physics-based description of the noise generation mechanisms widely adopted in distributed numerical modeling, mild approximations provide a fully behavioral representation that can be empirically extracted on the basis of measurement data only, and can be easily implemented into commercial computer-aided design tools by means of conventional, uncorrelated noise sources. As far as small-signal (i.e., linear) bias-dependent operation is concerned, it is shown how well-known, widely applied compact models for high-frequency noise can be considered as linearized special cases of the proposed approach. For a full validation, experimental examples are provided, both in small-and large-signal operation, for a GaAs-pHEMT, by considering the case study of a broad-band low-noise amplifier progressively driven into nonlinear regime by an increasing power interferer. © 2014 IEEE.

Published
2015

33. A New Technique for Thermal Resistance Measurement in Power Electron Devices

Author

Alberto Santarelli, Paola Rinaldi, Fabio Filicori, Giorgio Vannini, Filicori F., Rinaldi P., Vannini G., and Santarelli A.

Subjects
ELECTRON DEVICE, Materials science, Instrumentation, Thermal resistance, Electron, Electrical devices, THERMAL RESISTANCE, Characterization (materials science), Power (physics), ING-INF/07 Misure elettriche e elettroniche, DEVICE CHARACTERIZATION, Thermal laser stimulation, device characterization, electron device, ING-INF/01 Elettronica, Electronic engineering, Power semiconductor device, Electrical and Electronic Engineering, power semiconductor devices, semiconductor device testing, thermal resistance measurement
Abstract

A simple technique is proposed for the thermal resistance measurement of electron devices. The new approach is based on the standard measurements which are normally carried out for the electrical characterization of power devices, without requiring special-purpose instrumentation and/or physics-based temperature-dependent electrical device models. Experimental results, which confirm the validity of the new method, are provided.

Published
2005

34. Equivalent-voltage approach for modeling low-frequency dispersive effects in microwave FETs

Author

Alberto Santarelli, Giorgio Vannini, Rudi Paolo Paganelli, G. Zucchelli, Fabio Filicori, Santarelli A., Zucchelli G., Paganelli R., Vannini G., and Filicori F.

Subjects
Engineering, Low-frequency dispersive effects, microwave field effect transistors, Port (circuit theory), Low frequency, Signal, ING-INF/07 Misure elettriche e elettroniche, semiconductor device models, ING-INF/01 Elettronica, Electronic engineering, field effect transistors, Electrical and Electronic Engineering, Empirical modeling, Schottky gate, Basis (linear algebra), business.industry, high electron mobility transistors, Condensed Matter Physics, Electron device modeling, Nonlinear system, Schottky gate field effect transistors, Field-effect transistor, business, Microwave, Voltage
Abstract

In this letter, a simple and efficient approach for the modeling of low-frequency dispersive phenomena in FETs is proposed. The method is based on the definition of a virtual, nondispersive associated device controlled by equivalent port voltages and it is justified on the basis of a physically-consistent, charge-controlled description of the device. Dispersive effects in FETs are accounted for by means of an intuitive circuit solution in the framework of any existing nonlinear dynamic model. The new equivalent-voltage model is identified on the basis of conventional measurements carried out under static and small-signal dynamic operating conditions. Nonlinear experimental tests confirm the validity of the proposed approach.

Published
2002

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