39 results on '"Iniguez, Benjamin"'
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2. Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs
3. Foreword Special Issue on the 3rd Latin American Electron Device Conference
4. Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors
5. Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform
6. Modeling the Short-Channel Effects in Coplanar Organic Thin-Film Transistors
7. Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors
8. Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances
9. Compact Modeling of Non-Linear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors
10. Compact Modeling of Non-Linear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors
11. Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors
12. Foreword Special Issue on the 2nd Latin American Electron Device Conference
13. Noise-Based Simulation Technique for Circuit-Variability Analysis
14. New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs
15. Equivalent DG Dimensions Concept for Compact Modeling of Short-Channel and Thin Body GAA MOSFETs Including Quantum Confinement
16. Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K
17. Macromodel for AC and Transient Simulations of Organic Thin-Film Transistor Circuits Including Nonquasistatic Effects
18. Compact Modeling of Short-Channel Effects in Staggered Organic Thin-Film Transistors
19. Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors Due to Carrier-Number and Correlated- Mobility Fluctuation
20. Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs
21. Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs
22. Foreword
23. Advances in Compact Modeling of Organic Field-Effect Transistors
24. Foreword Special Issue on Compact Modeling of Semiconductor Devices
25. A Complete Charge-Based Capacitance Model for IGZO TFTs
26. Foreword Special Issue on Compact Modeling for Circuit Design
27. 2-D Physics-Based Compact DC Modeling of Double-Gate Tunnel-FETs
28. Analytical Model for Schottky Barrier Height and Threshold Voltage of AlGaN/GaN HEMTs With Piezoelectric Effect
29. Changes in the Editorial Board
30. A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part II: Total Charges and Intrinsic Capacitance Characteristics
31. A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics
32. Compact Capacitance Model for OTFTs at Low and Medium Frequencies
33. Foreword Special Issue on Compact Modeling of Emerging Devices
34. Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs
35. Frequency and Voltage Dependence of the Capacitance of MIS Structures Fabricated With Polymeric Materials
36. The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs
37. A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects
38. Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs
39. Analytical Charge and Capacitance Models of Undoped Cylindrical Surrounding-Gate MOSFETs
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