1. Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy
- Author
-
YongJin Cho, Hyunjea Lee, Jimy Encomendero, Jashan Singhal, Shao-Ting Ho, Zexuan Zhang, Xiang Li, Debdeep Jena, Mingli Gong, and Huili Grace Xing
- Subjects
Diffraction ,Materials science ,Spintronics ,business.industry ,Band gap ,Epitaxy ,Electronic, Optical and Magnetic Materials ,Ferrimagnetism ,Surface roughness ,Optoelectronics ,Electrical and Electronic Engineering ,Thin film ,business ,Molecular beam epitaxy - Abstract
Direct epitaxial integration of magnetic layers with wide bandgap nitride semiconductors will enable spin-controlled transport and photonic phenomena, seeding ideas for functional spintronic devices. Using plasma-assisted molecular beam epitaxy (MBE) in a previously unexplored window, significantly improved ferrimagnetic Mn4N layers are successfully grown on GaN with ~ 1 nm surface roughness. Distinct from earlier reports, the Mn4N layers grown on GaN are found to be 001 oriented with 12-fold in-plane symmetry in the diffraction pattern. This unique epitaxial registry originates from three equivalent rotational domains. The ferrimagnetic magnetotransport properties of low growth temperature Mn4N layers on GaN are comparable to those reported on cubic substrates such as MgO. However, a sign-flip of the Hall resistance is discovered for Mn4N layers grown above 300 °C.
- Published
- 2022