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This paper reports a novel HEMT structure that includes a built-in light emitter through band-to-band radiative recombination that is provided via holes from the p-GaN layer and electrons from the 2DEG. The electrical switching and illumination functions are able to be combined into a single device. The peak of the emitted light spectrum is located at 365 nm, corresponding to the bandgap of the GaN layer. This device uses a simple and cost-effective process, and shows the possibility for use in applications such as optical interconnects and optoelectronic integrated circuits.

Physical models for threshold voltage and drain saturation current of AlGaN/GaN MIS-FinFETs have been established and verified by TCAD simulation to provide guidelines for the GaN MIS-FinFETs-based designs. The depletion effect on the two dimensional electron gases (2DEG) channel by sidewall fin gate is modeled based on the numerical solutions of Poisson equation with proper boundary conditions. The conduction band at the 2DEG zone lifted above the Fermi level by the gate bias is modeled for getting the threshold voltage. The device saturation current, comprising 2DEG channel current and sidewall channel current, as a function of fin width has also been modeled. The influences of device design parameters on the threshold voltage and saturation current are analyzed by the proposed models with verification.

In this paper, a single-stage LED driver is proposed for a street lighting system. Two boost circuits that share a single inductor are formed by integrating the switches of a half-bridge $LLC$ resonant converter. Both boost circuits operate in the boundary conduction mode, which realizes a power-factor correction function. Because the input voltage of the LED driver is divided by two capacitors, the bus voltage is considerably reduced to almost the input peak voltage, rendering the novel single-stage LED driver to work suitably under high-input-voltage conditions. The soft-switching characteristics of the half-bridge $LLC$ resonant circuit are not affected by the integration of the switches; thus, the converter has a low cost and a high efficiency. A 100-W prototype was developed, and the efficiency was determined to be as high as 91.1% in a full-load state under a 220-V ac input.