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Start Over Author "Ko, Li" Publisher institute of electrical and electronics engineers (ieee)
31 results on '"Ko, Li"'

15. Junctionless Poly-Si Nanowire Transistors With Low-Temperature Trimming Process for Monolithic 3-D IC Application

Author

Po-Yi Kuo, Jer-Yi Lin, Ko-Li Lin, Chun-Chieh Chin, and Tien-Sheng Chao

Subjects
010302 applied physics, Fabrication, Materials science, business.industry, Doping, Transistor, Nanowire, Nanotechnology, 02 engineering and technology, Surface finish, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Thin-film transistor, law, Etching (microfabrication), 0103 physical sciences, Optoelectronics, Trimming, Electrical and Electronic Engineering, 0210 nano-technology, business
Abstract

In this paper, the junctionless (JL) ultrathin polycrystalline-Si (poly-Si) nanowire (NW) transistors with gate-all-around configuration and raised source/drain were successfully fabricated by a low-temperature trimming process. The 140 °C-heated phosphoric acid (HPA) was adopted for trimming the channel dimension, which exhibits a near roughness degradation-free etching and excellent trimming uniformity. As the HPA immersing time increased, the channel dimension was thinned and narrowed, resulting in the greater electrostatic integrity. Therefore, the steep subthreshold swing ~75 mV/decade, low drain-induced barrier lowering ~33 mV/V, and high on/off currents ratio ( $I_{\mathrm{\scriptscriptstyle ON}}/I_{\mathrm{\scriptscriptstyle OFF}}) \sim 7 \times 10^{6}$ can be achieved. These superior characteristics of low-temperature JL poly-Si NW transistors are promising candidates for the low thermal budget monolithic 3-D ICs and the system on panel applications in the future.

Published
2016

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