Search

Your search keyword '"Qian, Zhuo"' showing total 5 results
Start Over Author "Qian, Zhuo" Publisher institute of electrical and electronics engineers (ieee)
5 results on '"Qian, Zhuo"'

4. Improved Switching Uniformity and Low-Voltage Operation in ${\rm TaO}_{x}$-Based RRAM Using Ge Reactive Layer

Author

Y. Jiang, Victor Yi-Qian Zhuo, Yi Yang, John Robertson, Tow Chong Chong, Rong Zhao, and Luping Shi

Subjects
Materials science, business.industry, Bilayer, Electronic, Optical and Magnetic Materials, Resistive random-access memory, Gibbs free energy, symbols.namesake, Electrical resistivity and conductivity, Low-power electronics, Electric field, symbols, Optoelectronics, Electrical and Electronic Engineering, business, Low voltage, Voltage
Abstract

Significant improvements in the spatial and temporal uniformities of device switching parameters are successfully demonstrated in Ge/TaOx bilayer-based resistive switching devices, as compared with non-Ge devices. In addition, the reported Ge/TaOx devices also show significant reductions in the operation voltages. Influence of the Ge layer on the resistive switching of TaOx-based resistive random access memory is investigated by X-ray spectroscopy and the theory of Gibbs free energy. Higher uniformity is attributed to the confinement of the filamentary switching process. The presence of a larger number of interface traps, which will create a beneficial electric field to facilitate the drift of oxygen vacancies, is believed to be responsible for the lower operation voltages in the Ge/TaOx devices.

Published
2013

Catalog

Books, media, physical & digital resources
See catalog results