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2. Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors

3. Total Ionizing Dose Responses of 22-nm FDSOI and 14-nm Bulk FinFET Charge-Trap Transistors

4. Sensitive-Volume Model of Single-Event Latchup for a 180-nm SRAM Test Structure

7. Radiation Response and Adaptive Control-Based Degradation Mitigation of MEMS Accelerometers in Ionizing Dose Environments

8. CubeSats and Crowd-Sourced Monitoring for Single Event Effects Hardness Assurance

9. Bayesian Inference Modeling of Total Ionizing Dose Effects on System Performance

10. Effects of Energy-Deposition Variability on Soft Error Rate Prediction

12. System Health Awareness in Total-Ionizing Dose Environments

13. Total-Ionizing-Dose Induced Timing Window Violations in CMOS Microcontrollers

14. The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets

16. Muon-Induced Single Event Upsets in Deep-Submicron Technology

18. Heavy Ion Testing With Iron at 1 GeV/amu

19. Monte Carlo Simulation of Single Event Effects

21. Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

23. A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations

24. Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch

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