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Few-cycle pulse generation based on Ti:sapphire, Cr:forsterite, and Cr:YAG gain media is reviewed. The dynamics of these laser systems is well understood in terms of soliton and dispersion managed soliton formation stabilized by artificial saturable absorber action provided by Kerr-lens modelocking. These systems generate 5-, 14-, and 20-fs pulses with spectral coverages of 600-1150, 1100-1600, and 1200-1500 nm, respectively. The design of dispersion compensating laser optics providing high reflectivity and prismless operation over this bandwidth is discussed. A novel active synchronization scheme based on balanced optical cross correlation, the equivalent to balanced microwave detection, for synchronization of independently mode-locked lasers is introduced. Its use in synchronizing an octave-spanning Ti:sapphire laser and a 30-fs Cr:forsterite laser yields 300 attoseconds timing jitter measured from 10 mHz to 2.3 MHz. The spectral overlap between the two lasers is large enough to enable direct detection of the difference in the carrier-envelope offset frequency between the two lasers. These are the most important steps in the synthesis of single-cycle optical pulses with spectra spanning 600-1600 nm.

We demonstrate self-starting 6.5-fs pulses from a Kerr-lens-mode-locked Ti:sapphire laser with an average output power of 200 mW at a pulse repetition rate of 86 MHz. We have achieved a mode-locking buildup time of only 60 /spl mu/s, using a broad-band semiconductor saturable absorber mirror to initiate the pulse formation. The dispersion has been compensated with a prism pair in combination with improved double-chirped mirrors. The prism pair allows for the flexible adjustment of both the duration and the center wavelength of the pulse. The double-chirped mirrors show a high reflectivity better than 99.8% over the full bandwidth of 300 nm and a controlled group delay over more than 250 nm. The choice of a proper output coupler turns out to be critical for ultrashort pulse generation directly from the laser.

For the first time a two-chip wavelength-selective InGaAs-InP Fabry-Perot p-i-n receiver for dense wavelength-division-multiplexed systems is presented. This concept allows one to easily place the p-i-n diode outside the resonant cavity. A cavity length of more than 30 /spl mu/m is applied to obtain a small optical bandwidth of the receiver. The device can be combined with micromachined actuators for wavelength tuning. First measurements of the receiver showed a full-width at half-maximum bandwidth of 0.6 nm and a finesse of 53. The overall losses of the receiver including fiber-to-chip coupling losses are 6.6 dB.