Search

The dc performances of a novel InP-InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10/sup -12/ to 10/sup -1/ A). A current gain of 3 is obtained even operated at an ultralow collector current of 3.9/spl times/10/sup -12/ A (1.56 /spl times/10/sup -7/ A/cm/sup 2/). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5 V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent dc characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.