299 results on '"Yue, Hao"'
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2. Neuromorphic Speech Recognition With Photonic Convolutional Spiking Neural Networks
3. An Accurate Predictive Method of Crosstalk Peaks Considering Dynamic Transfer Characteristics and Miller Ramp for SiC MOSFETs
4. Minimum Initial Marking Estimation in Labeled Petri Nets With Unobservable Transitions Based on Minimal Explanations
5. A Switching Oscillation Suppression Method with Clamping Function and Quantitative Design for SiC MOSFETs
6. High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications
7. Effects of Neutron Irradiation on Electrical Performance of β-Ga2 O3 Schottky Barrier Diodes
8. Insight Into the Leakage Current Transport Mechanism Transformation in β-Ga2O3 SBDs Under Forward Bias Stress
9. First Demonstration of Watt-Level C-Band MMIC Rectifier With GaN Schottky Diode
10. High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications
11. Effect of Hydrogen on Electrical Performance of Pt/Au β-Ga2O3 (001) Schottky Barrier Diodes
12. Physically Transient Artificial Neuron Based on Mg/Magnesium Oxide Threshold Switching Memristor
13. High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application
14. Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V d = 12 V
15. Simulation of Pulse Sharpening Mechanism of Vertical Diamond Avalanche Diode
16. High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer
17. A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO2-ZrO2-HfO2 and ZrO2-HfO2-ZrO2 Superlattice Ferroelectric Films
18. Plastic Photonic Synapse Based on VCSOA for Self-Learning in Photonic Spiking Neural Network
19. High Linear and Temperature Insensitive GaAs Power Amplifier Operating at 3.3–3.6 GHz Using a Multi-Feedback Branch Bias Circuit
20. Parameter Shift of Quasi-Vertical GaN-on-Si Schottky Barrier Diodes Under On-State Forward-Current (2–4 kA/cm2) Stress
21. HfO₂-Based Ferroelectric Optoelectronic Memcapacitors
22. A Hybrid-Integrated Photonic Spiking Neural Network Framework Based on an MZI Array and VCSELs-SA
23. Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing
24. High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring
25. Design of a 17–24-GHz High-Efficiency Power Amplifier for Satellite Communications
26. Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga₂O₃ Based Resistive Random Access Memory Device
27. Low Thermal Budget Reconfigurable Fully Depleted Silicon on Insulator Field-Effect-Transistors With Embedded Boolean Logic
28. Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V
29. High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications
30. Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes
31. InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications
32. Numerical Investigation of Laterally Downscaled Hydrogen-Terminated Diamond FETs
33. HfZrOx Hybrid DRAM/FRAM Arrays Featuring Excellent Endurance and Low Latency
34. BV > 3 kV/VTH = 3.5 V Normally-Off Al0.6Ga0.4N MOSFET With Recessed-Gate and Ferroelectric Gate Dielectric
35. Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT
36. Single Crystalline Diamond p-Channel Cascode and Inverter
37. Linearity Enhancement of AlGaN/GaN HEMTs With Selective-Area Charge Implantation
38. Improved Breakdown Voltage and Low Damage E-Mode Operation of AlON/AlN/GaN HEMTs Using Plasma Oxidation Treatment
39. Active Thermal Management of GaN-on-SiC HEMT With Embedded Microfluidic Cooling
40. High-Performance GaN Vertical Schottky Barrier Diode With Self-Alignment Trench Structure
41. 930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma
42. High-Performance AlGaN/GaN HEMTs With Hybrid Schottky–Ohmic Drain for Ka-Band Applications
43. 1-HEMT-1-Memristor With Hardware Encryptor for Privacy-Preserving Image Processing
44. The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer
45. A 10-W High-Power Amplifier Using Input Nonlinearity for K-Band Satcom Applications
46. High-Performance β-Ga2O3-Based Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor Under Zero Gate Bias
47. A Unity‐Gain Buffer Assisted Noise‐Shaping SAR ADC Based on Error‐Feedback Structure
48. Proposal and Simulation of Ga2O3 MOSFET With PN Heterojunction Structure for High-Performance E-Mode Operation
49. An Improved MPC With Reduced CMV and Current Distortion for PMSM Drives Under Variable DC-Bus Voltage Condition in Electric Vehicles
50. Fully Physically Transient Volatile Memristor Based on Mg/Magnesium Oxide for Biodegradable Neuromorphic Electronics
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