1. Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors
- Author
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Chun-Yi Chang, Chung-Lun Hsieh, Huan-Ean Chen, Yung-Hsuan Yang, Wei-Kuang Chao, and Ya-Hsiang Tai
- Subjects
Amorphous silicon ,Materials science ,Silicon ,business.industry ,Low-temperature polycrystalline silicon ,chemistry.chemical_element ,Oxide thin-film transistor ,Noise (electronics) ,Electronic, Optical and Magnetic Materials ,Amorphous solid ,chemistry.chemical_compound ,chemistry ,Thin-film transistor ,Electronic engineering ,Optoelectronics ,Flicker noise ,Electrical and Electronic Engineering ,business - Abstract
In this letter, a noise formula is newly proposed to calculate the low frequency noise for the three kinds of amorphous silicon, low temperature polycrystalline silicon, and amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). It is found that the noise behavior of the TFT depends on its drain current in a simple manner. Based on the analysis, the ratios of drain current to the noise level for these TFTs are compared. It reveals that a-IGZO TFT is the best candidate to be used in the active pixel sensor.
- Published
- 2014
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