22 results on '"Zheng, Yingkui"'
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2. 0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer
3. Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer
4. High-Power GaN SBD Limiter for Sub-6G With Fast Response and Recovery
5. Improved Stability of GaN MIS-HEMT With 5-nm Plasma-Enhanced Atomic Layer Deposition SiN Gate Dielectric
6. Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy
7. High-Power Microwave Limiters Using Recess-Free AlGaN/GaN Schottky Barrier Diodes
8. 7.05 W/mm Power Density Millimeter-Wave GaN MIS-HEMT With Plasma Enhanced Atomic Layer Deposition SiN Dielectric Layer
9. Impact of V th Instability on Time-Resolved Characteristics of MIS-HEMT-Based GaN Power IC
10. Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier
11. Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation
12. Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure
13. Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD
14. Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess
15. Effects of Fluorine Plasma Treatment on Au-Free Ohmic Contacts to Ultrathin-Barrier AlGaN/GaN Heterostructure
16. Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures
17. High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz
18. Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
19. High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
20. Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer
21. High-$f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ Passivation
22. Thermal Storage of AlGaN/GaN High-Electron-Mobility Transistors
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