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Exposed to Sandblasting P. Horodeka,b,∗, J. Dryzek, A.G. Kobets, M. Kulik, V.I. Lokhmatov, I.N. Meshkov, O.S. Orlov, V. Pavlov, A.Yu. Rudakov, A.A. Sidorin, K. Siemek and S.L. Yakovenko Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow region, Russia Institute of Nuclear Physics, PAS, E. Radzikowskiego 152, 31-342 Krakow, Poland Institute of Physics, Opole University, Oleska 48, 45-052 Opole, Poland Institute of Electrophysics and Radiation Technologies, NAS of Ukraine Chernyshevsky St. 28, 61002 Kharkov, Ukraine Institute of Physics, Maria Curie-Skaodowska University, pl. M. Curie-Skaodowskiej 1, 20-031 Lublin, Poland

Dielectric Function of Native Oxide on Ion-Implanted GaAs M. Kulika,∗, W. Rzodkiewicz, Š. Gluba and A.P. Kobzev Institute of Physics, Maria Curie-Skaodowska University, pl. M. Curie-Skaodowskiej 1, 20-031 Lublin, Poland Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa, Poland Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, Joliot-Curie 6 141980 Dubna, Moscow region, Russia

Chemical Composition of Native Oxide Layers on In Implanted and Thermally Annealed GaAs M. Kulika,∗, D. Koaody«ska, J. ›uk, F.F. Komarov and J. Filiks Institute of Physics, Maria Curie-Skaodowska University, pl. M. Curie-Skaodowskiej 1, 20-031 Lublin, Poland Department of Inorganic Chemistry, Faculty of Chemistry, Maria Curie-Skaodowska University pl. M. Curie-Skaodowskiej 2, 20-031 Lublin, Poland Institute of Applied Physics Problems, Belarussian State University, Minsk, Belarus Semi-insulating GaAs wafers have been implanted with 250 keV In ions at a uence of 3× 10 cm−2. The samples prepared in this way were subsequently annealed at a temperature of 600 ◦C or 800 ◦C for 2 h. Thicknesses of the native oxide layers on implanted GaAs after samples storage in air were evaluated using the Rutherford backscattering spectrometry with the nuclear reaction O(α, α)O method. The chemical composition of native oxide layers on In implanted and annealed GaAs has been studied using X-ray photoelectron spectroscopy. As2O3, As2O5, Ga2O3, GaAs, InAs and InAsO4 compounds were detected in these layers.

Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500 ±C Al+ ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600 ±C) thermal annealing.

We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500 ◦C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050 ◦C. A part of the samples implanted at 25 ◦C was additionally exposed to H+2 ions (100 keV, 1.2 × 10 cm−2 in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2–80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.

We performed implantation experiments; applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga,Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen and neon implantation.

The characteristic dome-like shape distribution of electric parameters (with the biggest values in the middle and the lowest values in the corners of the gate) has been observed in our investigations. Taking the results of the papers into account, the following hypothesis was drawn: the shape distribution of electrical parameters has been caused by the irregular shape of stress distribution under the metal gate. To prove or deny the assumed hypothesis, a lot of investigations on stress and strain in MOS structures are being performed. The study of the atomic composition of electronic components constitutes the starting point of their characterization. Therefore, in this paper, we present experimental results of hydrogen, oxygen, aluminum, silicon, and copper concentrations in MOS structures carried out by the Rutherford backscattering spectrometry and elastic recoil detection methods. These techniques allow inter alia determination of silicon and oxygen content as a function of the position x on a wafer. On the basis of depth pro le elastic recoil detection measurements performed on Al and AlSiCu gates, a much larger hydrogen content in the surface layer for MOS structure with Al gate was con rmed. Copper atoms were detected only in the AlSiCu gate.