16 results on '"Kadota Y"'
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2. 1.3 µm laser diodes with butt-jointed selectively grown spot-size converters uniformly fabricated on a 2 in InP substrate.
3. Uniformly beam expanded 1.3 µm laser diodes with thin separate confinement heterostructure layers for high coupling efficiency and good temperature characteristic.
4. High-coupling-efficiency laser diodes integrated with spot-size converters fabricated on 2 inch InP substrates.
5. High temperature operation with low-loss coupling to fibre for narrow-beam 1.3 µm lasers with butt-jointed selective grown spot-size converter.
6. Stable CW operation of 1.3 µm double-heterostructure laser heteroepitaxially grown on Si.
7. Polarisation-insensitive semiconductor arrayed waveguide grating integrated with spotsize converter.
8. Spotsize converters integrated with deep ridge waveguide structure.
9. Four-channel polarisation-insensitive SOA gate array integrated with butt-jointed spot-size converters.
10. Temperature insensitive InGaAsP/InP optical filter integrated with dual photodiodes.
11. InP-based 64-channel arrayed waveguide grating with 50 GHz channel spacing and up to –20 dB crosstalk.
12. Narrow beam 1.3 µm superluminescent diode with butt-jointed selectively grown spot size converter.
13. Narrow-beam 1.3 µm superluminescent diode with butt-jointed selecfively grown spot-size converter.
14. Iron-doped InP buried laser heteroepitaxially grown on Si.
15. 1.3 µm large spot-size laser diodes with laterally tapered active layer.
16. Low resistance 1.55 µm InGaAsP/InP semi-insulating buried heterostructure laser diodes using a multilayer contact structure.
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