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Your search keyword '"Otsubo K"' showing total 2 results
Start Over Author "Otsubo K" Publisher institution of engineering & technology
2 results on '"Otsubo K"'

1. Uncooled 25 Gbit/s direct modulation of semi-insulating buried-heterostructure 1.3 µm AlGaInAs quantum-well DFB lasers.

Author

Otsubo, K., Matsuda, M., Takada, K., Okumura, S., Ekawa, M., Tanaka, H., Ide, S., Mori, K., and Yamamoto, T.

Subjects
*LASERS, *LIGHT amplifiers, *ELECTRONIC modulation, *CARRIER waves, *ELECTRONICS
Abstract

Uncooled 25 Gbit/s direct modulation of 1.3 µm DFB lasers is demonstrated. The 150 µm-long semi-insulating buried-heterostructure AlGaInAs quantum-well DFB lasers show clear eye-openings with dynamic extinction ratio of 5 dB up to 70°C. 13 km singlemode-fibre transmission experiments using the devices show low power penalty within 1.3 dB between 25 and 70°C. These characteristics are the first achievement by 1.3 µm directly modulated lasers. [ABSTRACT FROM AUTHOR]

Published
2008
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2. Low-driving-current temperature-stable 10 Gbit/s operation of p-doped 1.3 µm quantum dot lasers between 20 and 90°C.

Author

Ishida, M., Hatori, N., Otsubo, K., Yamamoto, T., Nakata, Y., Ebe, H., Sugawara, M., and Arakawa, Y.

Subjects
*NONLINEAR optics, *OPTOELECTRONIC devices, *LIGHT sources, *TEMPERATURE, *THERMAL properties, *QUANTUM dots
Abstract

Low-driving-current temperature-stable 10 Gbit/s direct modulation was achieved for optimised 200 µm-long short cavity 1.3 µm p-doped quantum dot lasers. Driving conditions were 25.2 mAp-p for the modulation current and 23.4 mA for the bias current through the whole temperature range from 20 to 90°C. [ABSTRACT FROM AUTHOR]

Published
2007
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