21 results on '"Kurishima, K"'
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2. InP/InGaAs double heterojunction bipolar transistors with BV CEO = 12 V and f max = 470 GHz
3. 0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100
4. 100 Gbit∕s clock recovery OEIC using InP∕InGaAs HPT
5. 90 Gbit∕s 0.5 W decision circuit using InP∕InGaAs double heterojunction bipolar transistors
6. 80 GHz electrical clock extraction from 80 Gbit∕s RZ optical data stream using direct optical injection locking of InP∕InGaAs HPT oscillator
7. Over 40 Gbit∕s 16:1 multiplexer IC using InP∕InGaAs HBT technology
8. 3.48 ps ECL ring oscillator using over-300 GHz fT∕fmax InP DHBTs
9. Low-power 50 Gbit∕s InP HBT 1:4 demultiplexer IC with multiphase clock architecture
10. 3.21 ps ECL gate using InP∕InGaAs DHBT technology
11. High-input-sensitivity, low-power 43 Gbit∕s decision circuit using InP∕InGaAs DHBTs
12. Very-high-speed selector IC using InP∕InGaAs heterojunction bipolar transistors
13. Direct optical injection locking of 96 GHz InP/InGaAs HPT oscillator IC using DSB-SC modulated lightwave
14. InP-InGaAs uni-travelling-carrier photodiode for monolithic integration with heterojunction bipolar transistors
15. 20 Gbit/s regenerative receiver IC using InP/InGaAs double-heterostructure bipolar transistors
16. Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs double-heterojunction bipolar transistors
17. High fmax carbon-doped base InP/InGaAs heterojunction bipolar transistors grown by MOCVD
18. Evaluation of base transit time in ultra-thin carbon-doped base InP/InGaAs heterojunction bipolar transistors
19. High-speed carbon-doped-base InP/InGaAs heterojunction bipolar transistors grown by MOCVD
20. InP/InGaAs double-heterojunction bipolar transistor with step-graded InGaAsP collector
21. High-speed InP/InGaAs HBTs operated at submilliampere collector currents
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