1. AuBe Ohmic contacts to p-type ZnTe
- Author
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Shu–Tsun Chou, C. M. Yang, Yi Cheng Cheng, Yi Chang Cheng, C. M. Tasi, P. H. Wu, Wen-Jen Lin, Wen-How Lan, Kai-Feng Huang, K. H. Cheng, and Kuochou Tai
- Subjects
Materials science ,business.industry ,Annealing (metallurgy) ,Contact resistance ,Zinc compounds ,Analytical chemistry ,chemistry.chemical_element ,Omega ,chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,Beryllium ,business ,Ohmic contact - Abstract
Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0/spl times/10/sup -6/ /spl Omega/ cm/sup 2/ for a p-doping level of 1.6/spl times/10/sup 19/ cm/sup -3/ and at an annealing temperature of 200/spl deg/C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe.
- Published
- 1998
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