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The design of cost-effective standards for the quality of nano-objects is currently a key issue toward their massive use for optoelectronic applications. The observation by photoluminescence of narrow excitonic and biexcitonic emission lines in semiconductor nanowires is usually accepted as evidence for high structural quality. Here, we perform time-resolved cathodoluminescence experiments on isolated ZnO nanobelts grown by chemical vapor deposition. We observe narrow emission lines at low temperature, together with a clear biexciton line. Still, drastic alterations in both the CL intensity and lifetime are observed locally along the nano-object. We attribute these to non-radiative recombinations at edge dislocations, closing basal plane stacking faults, inhomogeneously distributed along the NB length. This leads us to the conclusion that the observation of narrow excitonic and biexcitonic emission lines is far from sufficient to grade the quality of a nano-object.

We have studied the magnetic behaviour of Fe(3)O(4) nanowires (NWs) with two different diameter ranges, above 150 nm and below 60 nm, made by electrodeposition techniques into a polymeric template. The nanowires were characterized using various techniques, in particular Mössbauer and thermoelectrical power measurements. The stoichiometric distribution of Fe cations showed clearly the presence of the magnetite inverse spinel electronic structure. Structural analysis performed using high-resolution transmission electron microscopy revealed two kinds of nanowire morphologies depending on the size. For nanowires above 150 nm in diameter, a contiguous network of well-bound nanoparticles was obtained. Instead, with a diameter of 60 nm, a polycrystalline structure was observed. The largest nanowires presented a magnetoresistance (MR) greater than 10%, whereas the thinner nanowires had almost none.