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An ultra-wideband and high-efficiency reflective linear-to-circular polarization conversion metasurface is proposed. The proposed metasurface is composed of a square array of a corner-truncated square patch printed on grounded dielectric substrate and covered with a dielectric layer, which is an orthotropic anisotropic structure with a pair of mutually perpendicular symmetric axes u and v along the directions with the tilt angles of ±45° with respect to the vertical y axis. When the u- and v-polarized waves are incident on the proposed metasurface, the phase difference between the two reflection coefficients is close to –90° in an ultra-wide frequency band, so it can realize high-efficiency and ultra-wideband LTC polarization conversion under both x- and y-polarized incidences in this band. The proposed polarization conversion metasurface is simulated and measured. Both the simulated and measured results show that the axial ratio (AR) of the reflected wave is kept below 3 dB in the ultra-wide frequency band of 5.87 GHz–21.13 GHz, which is corresponding to a relative bandwidth of 113%; moreover, the polarization conversion rate (PCR) can be kept larger than 99% in a frequency range of 8.08 GHz–20.92 GHz. [ABSTRACT FROM AUTHOR]

We report the dc and rf performance of graphene rf field-effect transistors, where the graphene films are grown on copper by using the chemical vapour deposition (CVD) method and transferred to SiO2/Si substrates. Composite materials, benzocyclobutene and atomic layer deposition Al2O3 are used as the gate dielectrics. The observation of n- and p-type transitions verifies the ambipolar characteristics in the graphene layers. While the intrinsic carrier mobility of CVD graphene is extracted to be 1200 cm2/V·s, the parasitic series resistances are demonstrated to have a serious impact on device performance. With a gate length of 1 µm and an extrinsic transconductance of 72 mS/mm, a cutoff frequency of 6.6 GHz and a maximum oscillation frequency of 8.8 GHz are measured for the transistors, illustrating the potential of the CVD graphene for rf applications. [ABSTRACT FROM AUTHOR]

Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al2O3 as the top-gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of 1 μm, are larger than 800 MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors, which paves the way for high-performance graphene devices and circuits. [ABSTRACT FROM AUTHOR]