Search

We investigate the violation of two types of Leggett-Garg (LG) inequalities in self-assembled quantum dots under the stationarity assumption. By comparing the two types of LG inequalities, we find the better one that is easier to be tested in an experiment. In addition, we show that the fine-structure splitting, background noise and temperature of quantum dots greatly affect the violation of LG inequalities. [ABSTRACT FROM AUTHOR]

In order to investigate the carrier redistribution mechanisms in InAs/GaAs self-assembled quantum dots, the photoluminescent energy peak shift is studied with increasing excitation power. Unusually for samples of relatively low density, it is shown that the energy peak position could recover slowly after a fast redshift, associated with the increasing excitation power. A theoretical model is presented, which involves the Auger effect assisting carrier recapture as important mechanisms during the relaxation process. [ABSTRACT FROM AUTHOR]

The peaks of exciton and biexciton from the single quantum dot (QD) micro-photoluminescence spectra are identified by observing the intensity of those peaks in relation to increasing excitation power. In order to further verify the properties of the exciton and biexciton, we perform auto- and cross correlation measurements. Using the former, we confirm the antibunching property of the signal light emitted from the single QD. Using cross correlation measurement, we verify that the exciton and biexciton emissions originate from the same QD and they are strongly correlated with each other. Lastly, we analyze the behavior of the cross correlation function in both the cases of saturated and unsaturated excitation of the QD. [ABSTRACT FROM AUTHOR]