Search

Flip-flops are fundamental building block in designing the digital circuits. They contribute significant amount of power consumption in the digital systems. In the modern era of VLSI design, power consumption has become crucial factor. As the technology is scaled down below 65nm, leakage power contributes significantly to overall power consumption of digital circuits. Since, Flip-flop is a fundamental building block in designing digital systems, reducing the power consumption of Flip-flop is required to achieve low power consumption of digital systems. Recently single-phase clocking technique has been employed in designing FFs to achieve low power consumption. This technique reduces excess loading on the clock signal. In this article performance of recent single-phase clocked FFs is compared with the conventional transmission-gate Flip-flop. Also, drawbacks of these FFs are discussed. For the comparison of performance of single-phase-clocked FFs with conventional transmission-gate FF, all the simulations are performed at 45-nm predictive technology on Tanner EDA tool.

Photoreflectance (PR) and Photoluminescence (PL) measurements have been performed at 77 K on single crystals of CuAl x Ga1-x (S0.5Se0.5)2 penternary alloys grown by the iodine chemical vapor transport method. The energies of excitons associated with uppermost valence bands have been obtained as a function of composition, and an approximately quadratic dependence has been found. Near-band-edge PL has been observed in the crystal with x≦0.77, and the PL has been discussed in terms of the free exciton.

CuInSe2 thin films were prepared on SiO2-coated sodalime glass substrate by the selenization of precursors in vacuum chamber. The deposition of In/Cu precursors was carried out with varying substrate temperature. Cu–In (In/Cu and Cu/In) precursors with or without thin Se layer (100 Å) were also prepared by varying stacking sequence of Cu and In. The structure and the morphology of In/Cu precursors have been investigated. It was found that the adhesive property of the CuInSe2 film to the substrate strongly depends on precursor preparation conditions.