28 results on '"Anderson, Travis J."'
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2. Study of anode doping and avalanche in foundry compatible 1.2kV vertical GaN PiN diodes
3. Investigation of the Reverse Leakage Behavior and Substrate Defects in Vertical GaN Schottky and PIN Diodes.
4. Demonstration of CuI as a P–N heterojunction toβ-Ga2O3
5. Polarity dependent implanted p-type dopant activation in GaN
6. Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates.
7. (Invited) Recent Progress in Medium-Voltage Vertical GaN Power Devices.
8. (Invited) GaN Photoconductive Semiconductor Switches for Efficient High-Voltage Power Conversion Applications.
9. Lateral GaN JFET Devices on Large Area Engineered Substrates.
10. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates
11. Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments
12. Hexagonal boron nitride particles for determining the thermal conductivity of diamond films based on near-ultraviolet micro-Raman mapping
13. Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices.
14. GaN Power Devices - Current Status and Future Directions.
15. Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition
16. High Voltage GaN Lateral Photoconductive Semiconductor Switches.
17. Ultraviolet detector based on graphene/SiC heterojunction
18. Characterization of a selective AlN wet etchant
19. Comparison of AlN encapsulants for high-temperature GaN annealing
20. Dry Etching of High Aspect Ratio 4H-SiC Microstructures.
21. A Tri-Layer PECVD SiN Passivation Process for Improved AlGaN/GaN HEMT Performance.
22. Efficient Incorporation of Mg in Solution Grown GaN Crystals
23. Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices
24. Comparison of AIN Encapsulants for Bulk GaN Multicycle Rapid Thermal Annealing.
25. Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN.
26. Vertical GaN Junction Barrier Schottky Diodes.
27. AlGaN/GaN High Electron Mobility Transistors Irradiated with 17 MeV Protons.
28. Ultra-Wide Bandgap Materials and Device.
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