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Your search keyword '"Andrey F. Tsatsulnikov"' showing total 3 results
Start Over Author "Andrey F. Tsatsulnikov" Publisher iop publishing
3 results on '"Andrey F. Tsatsulnikov"'

1. Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities

Author

Dmitri S Arteev, Andrey F. Tsatsulnikov, Alexei V. Sakharov, W. V. Lundin, Evgenii V. Lutsenko, M. V. Rzheutski, and E. E. Zavarin

Subjects
Materials science, Condensed matter physics, Ensemble forecasting, Materials Chemistry, State (functional analysis), Electrical and Electronic Engineering, Dislocation, Condensed Matter Physics, Quantum well, Electronic, Optical and Magnetic Materials
Abstract

The influence of dislocations on luminescence of InGaN/GaN multiple quantum wells was investigated by temperature-dependent and time-resolved room-temperature photoluminescence measurements and analyzed via localized-state ensemble model. The results show that dislocations decrease non-radiative recombination time and do not affect either radiative recombination time or non-radiative recombination mechanism. Moreover, dislocation-related broadening, increasing linearly with increased dislocation density, was found to take place. However, a significant part of spectral width (∼55 meV) is not defined by either dislocation-induced or alloy- and thermally-induced broadening, revealing the existence of other broadening mechanisms (e.g. carrier–carrier scattering-induced broadening).

Published
2021
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2. Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride

Author

W. V. Lundin, E. Y. Lundina, Sergey Yu. Karpov, Dmitry A Zakheim, A. V. Sakharov, Andrey F. Tsatsulnikov, Pavel N. Brunkov, and Eugene E Zavarin

Subjects
010302 applied physics, Materials science, business.industry, Schottky diode, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Silicon nitride, chemistry, 0103 physical sciences, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Deposition (chemistry)
Published
2018
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3. Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride.

Author

Dmitry A Zakheim, Wsevolod V Lundin, Alexey V Sakharov, Eugene E Zavarin, Pavel N Brunkov, Elena Y Lundina, Andrey F Tsatsulnikov, and Sergey Yu Karpov

Subjects
SCHOTTKY barrier diodes, METAL insulator semiconductors, STRAY currents, GALLIUM nitride, ELECTRIC properties of silicon nitride, POINT defects, CHEMOMETRICS, ACTIVATION energy
Abstract

Metal-insulator-semiconductor (MIS) GaN-based Schottky diodes with an ultra-thin in situ deposited Si3N4 dielectric are fabricated and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The leakage current of the reverse biased diodes is found to depend strongly on Si3N4 deposition temperature, with an activation energy of 7.3 eV, and reactor atmosphere (N2 versus H2). The dependence is attributed to point defects originating from the deviation of Si3N4 from stoichiometric composition. Deposition of Si3N4 at low temperatures is shown to substantially suppress the leakage current. The effective barrier heights in the MIS Schottky diodes are also affected by Si3N4 deposition conditions and, in particular, by the deposition temperature. [ABSTRACT FROM AUTHOR]

Published
2018
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