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Your search keyword '"Bietti S."' showing total 18 results
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18 results on '"Bietti S."'

5. Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

Author

Bietti, S, Sanguinetti, S, Somaschini, C, Koguchi, N, Isella, G, Chrastina, D, Fedorov, A, BIETTI, SERGIO, SANGUINETTI, STEFANO, SOMASCHINI, CLAUDIO, Fedorov, A., Bietti, S, Sanguinetti, S, Somaschini, C, Koguchi, N, Isella, G, Chrastina, D, Fedorov, A, BIETTI, SERGIO, SANGUINETTI, STEFANO, SOMASCHINI, CLAUDIO, and Fedorov, A.

Abstract

We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots

Published
2009

6. Fabrication of GaAs concentric multiple quantum rings by droplet epitaxy

Author

Somaschini, C, Bietti, S, Sanguinetti, S, Koguchi, N, Fedorov, A, Abbarchi, M, Gurioli, M, SOMASCHINI, CLAUDIO, BIETTI, SERGIO, SANGUINETTI, STEFANO, Gurioli, M., Somaschini, C, Bietti, S, Sanguinetti, S, Koguchi, N, Fedorov, A, Abbarchi, M, Gurioli, M, SOMASCHINI, CLAUDIO, BIETTI, SERGIO, SANGUINETTI, STEFANO, and Gurioli, M.

Abstract

We present the fabrication of a novel quantum nanostructure, constituted by three concentric quantum rings by droplet epitaxy. Atomic Force Microscopy and photoluminescence characterization of these nanostructures is reported

Published
2009

15. Axial InAs/GaAs heterostructures on silicon in a nanowire geometry

Author

Sergio Bietti, Henning Riechert, Andreas Biermanns, Lutz Geelhaar, Genziana Bussone, Achim Trampert, Claudio Somaschini, Stefano Sanguinetti, Ullrich Pietsch, Somaschini, C, Biermanns, A, Bietti, S, Bussone, G, Trampert, A, Sanguinetti, S, Riechert, H, Pietsch, U, and Geelhaar, L

Subjects
Materials science, Silicon, Nanowire, chemistry.chemical_element, Bioengineering, Substrate (electronics), Epitaxy, droplet epitaxy, molecular beam epitaxy, Mechanics of Material, General Materials Science, Electrical and Electronic Engineering, business.industry, Mechanical Engineering, Chemistry (all), Heterojunction, heterostructure, General Chemistry, Crystallographic defect, Semimetal, X-ray diffraction, Crystallography, chemistry, Mechanics of Materials, nanowire, Optoelectronics, Materials Science (all), business, Molecular beam epitaxy
Abstract

InAs segments were grown on top of GaAs islands, initially created by droplet epitaxy on silicon substrate. We systematically explored the growth-parameter space for the deposition of InAs, identifying the conditions for the selective growth on GaAs and for purely axial growth. The axial InAs segments were formed with their sidewalls rotated by 30° compared to the GaAs base islands underneath. Synchrotron X-ray diffraction experiments revealed that the InAs segments are grown relaxed on top of GaAs, with a predominantly zincblende crystal structure and stacking faults.

Published
2014
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16. Control of the lateral growth morphology in GaAs Droplet Epitaxy

Author

Stefano Sanguinetti, Alexey Fedorov, Nobuyuki Koguchi, Claudio Somaschini, Sergio Bietti, Somaschini, C, Bietti, S, Sanguinetti, S, Koguchi, N, and Fedorov, A

Subjects
History, Morphology (linguistics), Nanostructure, Fabrication, business.industry, Chemistry, Physics::Optics, Crystal growth, Concentric, Epitaxy, Symmetry (physics), quantum nanostructure, Computer Science Applications, Education, law.invention, dropet epitaxy, III-V semiconductor, Condensed Matter::Materials Science, Optics, law, Optoelectronics, Crystallization, business, FIS/03 - FISICA DELLA MATERIA
Abstract

We present the detailed fabrication method of two different GaAs nanostructures with cylindrical symmetry by the Droplet Epitaxy technique. Concentric Multiple Rings or Coupled Rings/Disks are successfully obtained, exploiting the lateral growth around the Ga droplets, through a fine control of the crystallization dynamics. © 2010 IOP Publishing Ltd.

Published
2010
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17. Fabrication of GaAs concentric multiple quantum rings by droplet epitaxy

Author

M. Abbarchi, Stefano Sanguinetti, Massimo Gurioli, Claudio Somaschini, Alexey Fedorov, Nobuyuki Koguchi, Sergio Bietti, Somaschini, C, Bietti, S, Sanguinetti, S, Koguchi, N, Fedorov, A, Abbarchi, M, and Gurioli, M

Subjects
Physics, quantum nanostructures, molecular beam epitaxy, III-V semiconductors, Nanostructure, Photoluminescence, Fabrication, business.industry, Physics::Optics, Nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Epitaxy, Characterization (materials science), Condensed Matter::Materials Science, Microscopy, Physics::Atomic and Molecular Clusters, Optoelectronics, Luminescence, business, Quantum, FIS/03 - FISICA DELLA MATERIA
Abstract

We present the fabrication of a novel quantum nanostructure, constituted by three concentric quantum rings by droplet epitaxy. Atomic Force Microscopy and photoluminescence characterization of these nanostructures is reported.

Published
2009
Full Text
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18. Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

Author

Claudio Somaschini, Nobuyuki Koguchi, Stefano Sanguinetti, Alexey Fedorov, Sergio Bietti, Giovanni Isella, Daniel Chrastina, Bietti, S, Sanguinetti, S, Somaschini, C, Koguchi, N, Isella, G, Chrastina, D, and Fedorov, A

Subjects
quantum nanostructures, molecular beam epitaxy, III-V semiconductors, Fabrication, Photoluminescence, Materials science, Condensed matter physics, business.industry, Substrate (electronics), Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Epitaxy, Computer Science::Other, Condensed Matter::Materials Science, Lattice constant, Quantum dot, Quantum dot laser, Optoelectronics, business, Luminescence, FIS/03 - FISICA DELLA MATERIA
Abstract

We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.

Published
2009
Full Text
View/download PDF

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