1. Study on the high spectral intensity at the Dirac energy of single-layer graphene on an SiC substrate
- Author
-
Jinwoong Hwang and Choongyu Hwang
- Subjects
graphene ,angle-resolved photoemission spectroscopy ,in-gap states ,electron-plasmon interactions ,Science ,Physics ,QC1-999 - Abstract
We have investigated electron band structure of epitaxially grown graphene on an SiC(0001) substrate using angle-resolved photoemission spectroscopy. In single-layer graphene, abnormal high spectral intensity is observed at the Dirac energy whose origin has been questioned between in-gap states induced by the buffer layer and plasmaron bands induced by electron–plasmon interactions. With the formation of double-layer graphene, the Dirac energy does not show the high spectral intensity any longer different from the single-layer case. The inconsistency between the two systems suggests that the main ingredient of the high spectral intensity at the Dirac energy of single-layer graphene is the electronic states originating from the coupling of the graphene π bands to the localized π states of the buffer layer, consistent with the theoretical prediction on the presence of in-gap states.
- Published
- 2016
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