1. Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing
- Author
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Kazuto Koike, Jeffrey A. Davis, Lap Van Dao, Masataka Inoue, Shigehiko Sasa, Victoria A. Coleman, Hoe Hark Tan, Mitsuaki Yano, Christopher Ticknor, Xiaoming Wen, Peter Hannaford, and Chennupati Jagadish
- Subjects
Photoluminescence ,Materials science ,Condensed matter physics ,Condensed Matter::Other ,Annealing (metallurgy) ,Oscillator strength ,Mechanical Engineering ,Exciton ,Bioengineering ,General Chemistry ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter::Materials Science ,symbols.namesake ,Ion implantation ,Stark effect ,Mechanics of Materials ,Electric field ,symbols ,General Materials Science ,Electrical and Electronic Engineering ,Quantum well - Abstract
Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron-hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength.
- Published
- 2008
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