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We report on the room temperature, simple and cheap preparation by mechano-synthesis of polycrystalline targets of complex sulphide semiconductors, namely CuInS2 (CIS), to be used for film deposition in physical vacuum techniques such as PLD, sputtering or LT-PED. The sulphur (S)-based targets usually require expensive high pressure equipment to compensate the high S vapour pressure; nevertheless they are indispensable for the deposition of high band-gap semiconductor materials. The comparison of CIS films grown by mechano-synthesis and by commercial targets demonstrates similar material quality, making the mechano-synthesis a viable solution in the fabrication of high band-gap, S-based targets of complex chalcogenides. [ABSTRACT FROM AUTHOR]