1. MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs
- Author
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J.-F. Carlin, G. Pozzovivo, S. Abermann, Dionyz Pogany, Gottfried Strasser, Jan Kuzmik, Emmerich Bertagnolli, and Nicolas Grandjean
- Subjects
Electron mobility ,Materials science ,business.industry ,Schottky barrier ,Transistor ,Chemical vapor deposition ,High-electron-mobility transistor ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,law.invention ,law ,Materials Chemistry ,Optoelectronics ,Metalorganic vapour phase epitaxy ,Electrical and Electronic Engineering ,business ,Leakage (electronics) ,High-κ dielectric - Abstract
We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from β-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of about 12 nm–14 nm are deposited for the MOS-HEMTs incorporating Ni/Au gates, whereas as a reference, Ni-contact-based 'conventional' Schottky-barrier (SB)-HEMTs are processed. The processed dielectrics decrease the gate current leakage of the HEMTs by about four orders of magnitude if compared with the SB-gated HEMTs and show superior device characteristics in terms of IDS and breakdown.
- Published
- 2007