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InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation (International technology roadmap for semiconductors (www.itrs2.net)). In this work we show that In0.75Ga0.25As quantum wells with a high mobility, 15 000 to 20 000 cm2V-1s-1at ambient temperature, show an InAs-like phonon with an energy of 28.8 meV, frequency of 232 cm-1that dominates the polar-optical mode scattering from ∼70 K to 300 K. The measured optical phonon frequency is insensitive to the carrier density modulated with a surface gate or LED illumination. We model the electron scattering mechanisms as a function of temperature and identify mechanisms that limit the electron mobility in In0.75Ga0.25As quantum wells. Background impurity scattering starts to dominate for temperatures

We present results of magneto-focusing on the controlled monitoring of spin polarization within a one-dimensional (1D) channel, and its subsequent effect on modulating the spin-orbit interaction (SOI) in a 2D GaAs electron gas. We demonstrate that electrons within a 1D channel can be partially spin polarized as the effective length of the 1D channel is varied in agreement with the theoretical prediction. Such polarized 1D electrons when injected into a 2D region result in a split in the odd-focusing peaks, whereas the even peaks remain unaffected (single peak). On the other hand, the unpolarized electrons, achieved by reducing the effective length of the 1D channel, do not affect the focusing spectrum and the odd and even peaks remain as single peaks, respectively. The split in odd-focusing peaks is evidence of direct measurement of spin polarization within a 1D channel, where each sub-peak represents the population of a particular spin state. Confirmation of the spin splitting is determined by a selective modulation of the focusing peaks due to the Zeeman energy in the presence of an in-plane magnetic field. We suggest that the SOI in the 2D regime is enhanced by a stream of polarized 1D electrons. The spatial control of spin states of injected 1D electrons and the possibility of tuning the SOI may open up a new regime of spin-engineering with application in future quantum information schemes.

We report the results of an investigation of ambipolar transport in a quantum well of 15 nm width in an undoped GaAs/AlGaAs structure, which was populated either by electrons or holes using positive or negative gate voltage Vtg, respectively. More attention was focussed on the low concentration of electrons n and holes p near the metal-insulator transition (MIT). It is shown that the electron mobility μe increases almost linearly with increase of n and is independent of temperature T in the interval 0.3 K - 1.4 K, while the hole mobility µp depends non-monotonically on p and T. This difference is explained on the basis of the different effective masses of electrons and holes in GaAs. Intriguingly, we observe that at low p the source-drain current (ISD)-voltage (V) characteristics, which become non-linear beyond a certain ISD, exhibit a re-entrant linear regime at even higher ISD. We find, remarkably, that the departure and reappearance of linear behaviour is not due to non-linear response of the system, but due to an intrinsic mechanism by which there is a reduction in the net number of mobile carriers. This effect is interpreted as evidence of inhomogeneity of the conductive 2D layer in the vicinity of MIT and trapping of holes in 'dead ends' of insulating islands. Our results provide insights into transport mechanisms as well as the spatial structure of the 2D conducting medium near the 2D MIT.

We report the development of a simple and reliable, front-sided-only fabrication technique for n-type ohmic contacts to two-dimensional electron gases (2DEGs) in undoped GaAs/AlGaAs quantum wells. We have adapted the well-established recessed ohmic contacts/insulated metal gate technique for inducing a 2DEG in an undoped triangular well to also work reliably for undoped square quantum wells. Our adaptation involves a change in the procedure for etching the ohmic contact pits to optimise the etch side-wall profile and depth. As an application of our technique, we present a front-side-gated ambipolar field effect transistor (FET), where both 2D electron and hole gases can be induced in the same quantum well. We present results of low-temperature (0.3 K - 4 K) transport measurements of this device, including assessment of the n-type ohmic contact quality. On the basis of our findings, we discuss why the fabrication of these contacts is difficult and how our technique circumvents the challenges.

The valence band offsets of ScxGa1-xN/AlN heterojunctions were measured by x-ray photoelectron spectroscopy (XPS) and were found to increase from 0.42 eV to 0.95 eV as the Sc content x increased from 0 to 0.15. The increase in valence band offset with increasing x is attributed to the corresponding increase in spontaneous polarization of the wurtzite structure. The ScxGa1-xN/AlN heterojunction is type I, similar to other III-nitride-based heterojunctions. The data also indicate that a type II staggered heterojunction, which can enhance spatial charge separation, could be formed if ScxGa1-xN is grown on GaN.

Four different methods for measuring the compositions of epitaxial ScxGa1-xN films were assessed and compared to determine which was the most reliable and accurate. The compositions of epitaxial ScxGa1-xN films with 0 ≤ x ≤ 0.26 were measured directly using Rutherford backscattering (RBS) and x-ray photoelectron spectroscopy (XPS), and indirectly using c lattice parameter measurements from x-ray diffraction and c/a ratio measurements from electron diffraction patterns. RBS measurements were taken as a standard reference. XPS was found to underestimate the Sc content, whereas c lattice parameter and c/a ratio were not reliable for composition determination due to the unknown degree of strain relaxation in the film. However, the Sc flux used during growth was found to relate linearly with x and could be used to estimate the Sc content.

InGaAs quantum well light emitting diodes (LED) with spin-injecting, epitaxial Fe contacts were\ud fabricated using an in situ wafer transfer process where the semiconductor wafer was transferred\ud under ultrahigh vacuum (UHV) conditions to a metals growth chamber to achieve a high quality\ud interface between the two materials. The spin LED devices were measured optically with applied\ud magnetic fields in either the Faraday or the oblique Hanle geometries in two experimental setups.\ud Optical polarizations efficiencies of 4.5% in the Faraday geometry and 1.5% in the Hanle\ud geometry are shown to be equivalent. The polarization efficiency of the electroluminescence is\ud seen to decay as the temperature increases although the spin lifetime remains constant due to the\ud influence of the D’yakonov–Perel’ spin scattering mechanism in the quantum well.

We perform magnetic focussing of high mobility holes confined in a shallow GaAs/Al0.33Ga0.67As quantum well grown on a (100) GaAs substrate. We observe ballistic focussing of holes over a path length of up to 4.9 μm with a large number of focussing peaks. We show that additional structure on the focussing peaks can be caused by a combination of the finite width of the injector quantum point contact and Shubnikov-de Haas oscillations. These results pave the way to studies of spin-dependent magnetic focussing and spin relaxation lengths in two-dimentional hole systems without complications of crystal anisotropies and anisotropic g-tensors.