1. Ni/Au contacts to corundum α-Ga2O3
- Author
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Massabuau, FCP, Adams, F, Nicol, D, Jarman, JC, Frentrup, M, Roberts, JW, O’Hanlon, TJ, Kovács, A, Chalker, PR, and Oliver, RA
- Subjects
Ga2O3 ,metal contact ,corundum ,transmission electron microscopy ,Schottky - Abstract
The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited α-Ga2O3 were investigated. Ni forms a Schottky contact with α-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was observed at the metal-semiconductor interface (unlike what is observed for other metals like Ti), and instead, the metallurgical processes of the Ni–Au bilayer dominate the electrical properties. It is found that 400 °C–450 °C is the optimal annealing temperature, which allows for metal diffusion to heal gaps at the metal/semiconductor interface, but is not sufficient for Ni and Au to significantly interdiffuse and form an alloy with compositional inhomogeneities.
- Published
- 2023
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