1. Physical vapor deposition-free scalable high-efficiency electrical contacts to MoS2.
- Author
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Shanmugam, Anusha, Thekke Purayil, Muhammad Arshad, Dhurjati, Sai Abhishikth, and Thalakulam, Madhu
- Subjects
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GOLD electrodes , *FERMI level , *INDIUM , *SCHOTTKY barrier , *VAPORS , *OHMIC contacts - Abstract
Fermi-level pinning caused by the kinetic damage during metallization has been recognized as one of the major reasons for the non-ideal behavior of electrical contacts, forbidding reaching the Schottky–Mott limit. In this manuscript, we present a scalable technique wherein Indium, a low-work-function metal, is diffused to contact a few-layered MoS2 flake. The technique exploits a smooth outflow of Indium over gold electrodes to make edge contacts to pre-transferred MoS2 flakes. We compare the performance of three pairs of contacts made onto the same MoS2 flake, the bottom-gold, top-gold, and Indium contacts, and find that the Indium contacts are superior to other contacts. The Indium contacts maintain linear I – V characteristics down to cryogenic temperatures with an extracted Schottky barrier height of ∼2.1 meV. First-principle calculations show the induced in-gap states close to the Fermi level, and the damage-free contact interface could be the reason for the nearly Ohmic behavior of the Indium/MoS2 interface. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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