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Your search keyword '"Geng, Wenping"' showing total 10 results
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6. Domain modulation in LiNbO3 films using litho piezoresponse force microscopy.

Author

Qiao, Xiaojun, Geng, Wenping, Zheng, Dongwan, Ren, Jing, Sun, Yao, Yang, Yun, Bi, Kaixi, and Chou, Xiujian

Subjects
*PIEZORESPONSE force microscopy, *COMPUTER storage devices, *FERROELECTRIC devices, *ELECTRIC fields, *THIN films
Abstract

Domain engineering plays a pivotal role in the development of ferroelectric non-volatile memory devices. In this work, we mainly focus on the domain kinetic in ion-sliced single crystal LiNbO3 thin films under tip-induced electric fields using piezoresponse force microscope (PFM). Polarization reversal takes place when the electric fields are above threshold value (coercive voltage Vc) of films. Besides, the dependence of domain dynamic on pulse duration and amplitude were investigated in detail, and specific local domain reversal (5 μm) was completed by the optimized poling condition. All the results reveal that tip-induced polarization reversal could be an effective way to domain engineering, which gives much more promising prospects regarding to the high density non-volatile ferroelectric memory devices. [ABSTRACT FROM AUTHOR]

Published
2021
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