1. Growth of heterojunctions in Si–Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation
- Author
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Cheng-Yen Wen, I-Ta Wang, Hsin-Yu Lee, and Yu-Tao Sun
- Subjects
Thermal oxidation ,Materials science ,Mechanical Engineering ,Alloy ,Nanowire ,Bioengineering ,Heterojunction ,02 engineering and technology ,General Chemistry ,engineering.material ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,0104 chemical sciences ,Chemical engineering ,Mechanics of Materials ,engineering ,General Materials Science ,Nanodot ,Electrical and Electronic Engineering ,Thin film ,0210 nano-technology ,Eutectic system - Abstract
Understanding the growth mechanism of heterojunctions in silicon-germanium alloy (Si-Ge) nanowires is helpful for designing adequate physical properties in the material for device applications. We examine the formation of the heterojunction in low Ge-content Si-Ge nanowires by an approach of thermal oxidation, which produces an atomically abrupt interface with an obvious concentration change. Forming heterojunctions in Si-Ge nanowires by this approach involves more complicated reaction routes than direct growth of heterojunction nanowires using the vapor-liquid-solid method. At the beginning of the oxidation process, the AuGeSi eutectic liquid at the nanowire tip significantly etches the Si-Ge alloy nanowires. Selective oxidation of Si results in a change of the relative amount of Ge to Si in the eutectic liquid, which further modulates the solubility of Ge and Si atoms. The compositional variation in the Au-Ge-Si ternary alloy system during the oxidation process accounts for the observed concentration profile in the heterojunction nanowire. The thermal oxidation approach is applied on a low Ge-content Si-Ge thin film that is coated with Au nanoparticles. Si-Ge nanodots, which exhibit a higher Ge concentration, are precipitated epitaxially in the film, as a result of compositional modulation in the AuGeSi eutectic liquid.
- Published
- 2019
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