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Your search keyword '"Hu, Zhongqiang"' showing total 16 results
Start Over Author "Hu, Zhongqiang" Publisher iop publishing
16 results on '"Hu, Zhongqiang"'

6. A high-resolution electric field sensor based on piezoelectric bimorph composite.

Author

Cheng, Miaomiao, Wu, Jingen, Guan, Mengmeng, Mao, Qi, Xian, Dan, Hu, Zhongqiang, Wang, Chenying, Wang, Zhiguang, Zhou, Ziyao, Zhao, Libo, Jiang, Zhuangde, and Liu, Ming

Abstract

The rapid development of the internet of things technology has led to great demand for intelligent electric field sensor (EFS). Several working principles have been proposed, however major challenges remain existed for the requirements of EFS with low-cost, large-range, and high-resolution. In this paper, an EFS based on piezoelectric (PE) bending effect using d 31 mode is developed, where a bending strain is induced on the sandwiched bimorph structure of PZT/PDMS/PZT under an applied electric field, and the capacitance value of the PDMS layer reveals detectable variation. We demonstrate an EFS operating at the stress-mediated coupling between PE ceramic and elastic dielectric polymer, which reveals advantages such as simple fabrication process, low-cost and low power consumption. Due to the sandwiched bimorph structure, the strain caused by the electric field can be effectively transferred to improve the resolution of the device. The constitutive equations for the sandwiched bimorph structure are built, and the working principle of the proposed EFS is demonstrated. The EFS exhibits high sensitivity under both AC and DC electric fields, with a resolution of 0.1 V cmâˆ'1 in the range of âˆ'3 to 3 kV cmâˆ'1. The proposed sensor provides an alternative solution for power equipment fault diagnosis, power frequency electric field detection, etc. [ABSTRACT FROM AUTHOR]

Published
2022
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16. Residual stress of (Pb0.92La0.08)(Zr0.52Ti0.48)O3 films grown by a sol–gel process.

Author

Ma, Beihai, Liu, Shanshan, Tong, Sheng, Narayanan, Manoj, Koritala, Rachel E, Hu, Zhongqiang, and Balachandran, Uthamalingam

Abstract

We deposited ferroelectric (Pb0.92La0.08)(Zr0.52Ti0.48)O3 films of ≈0.35 to ≈3.1 μm in thickness on platinized silicon substrates by chemical solution deposition. A dielectric constant of ≈1350 and dielectric loss of ≈0.04 were measured at room temperature. Hysteresis loop tests revealed that the remanent polarization increases while the coercive field decreases with PLZT film thickness. The residual stress in the PLZT films, as determined by the x-ray diffraction sin2ψ method, decreased from ≈380 to ≈200 MPa when the film thickness increased from 0.35 to 3.1 μm. The dependence of the residual stress (σ) on the PLZT film thickness (t) can be described by an empirical equation, σ = A0exp(−t2/λ2), with A0 ≈ 390 MPa and λ ≈ 3.8 μm. [ABSTRACT FROM AUTHOR]

Published
2013
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